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Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

✍ Scribed by Toshiki Makimoto; Kazuhide Kumarkura; Toshio Nishida; Naoki Kobayashi

Book ID: 107452816
Publisher: Springer US
Year: 2002
Tongue: English
Weight: 109 KB
Volume: 31
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-002-0149-9

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