𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Vacancy kinetics in heteropolytype epitaxy of SiC

✍ Scribed by S. Yu. Davydov; A. A. Lebedev

Book ID
111443796
Publisher
Springer
Year
2007
Tongue
English
Weight
124 KB
Volume
41
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Metastability of the Neutral Silicon Vac
Metastability of the Neutral Silicon Vacancy in 4H-SiC
✍ E. Rauls; Th. Lingner; Z. Hajnal; S. Greulich-Weber; Th. Frauenheim; J.-M. Spaet πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 182 KB πŸ‘ 1 views
Positron study of electron irradiation-i
Positron study of electron irradiation-induced vacancy defects in SiC
✍ A. Kawasuso; M. Yoshikawa; H. Itoh; R. Krause-Rehberg; F. Redmann; T. Higuchi; K πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 184 KB

Based on positron annihilation experiments, we have proposed that in 3C-SiC isolated silicon vacancies are responsible for positron trapping after electron irradiation. We have also proposed that in hexagonal SiC one type of vacancy defects survives after annealing at 1000 1C which is attributable t