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Vacancy Clustering in Irradiated SiC

✍ Scribed by Mokrushin, A. D. ;Girka, A. I. ;Shishkin, A. V.

Book ID: 105382915
Publisher: John Wiley and Sons
Year: 1991
Tongue: English
Weight: 330 KB
Volume: 128
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211280104

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Based on positron annihilation experiments, we have proposed that in 3C-SiC isolated silicon vacancies are responsible for positron trapping after electron irradiation. We have also proposed that in hexagonal SiC one type of vacancy defects survives after annealing at 1000 1C which is attributable t