𝔖 Bobbio Scriptorium
✦   LIBER   ✦

UV photoreflectance spectroscopy in strained silicon on insulator structures

✍ Scribed by Munguía, Jacobo ;Bluet, Jean-Marie ;Chouaib, Houssam ;Bremond, Georges ;Bru-Chevallier, Catherine

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
339 KB
Volume
206
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

The optical modulation technique of photoreflectance (PR) is applied on tensely‐strained silicon on insulator (sSOI) substrates in order to determine the deformation potential in the strained silicon direct band gap. Raman spectroscopy is used for strain determination. A redshift of the Si direct band gap transition is observed as the strain induced in the layer is increased. We report a band gap shrinkage at Γ‐point down to 60 ± 6 meV, 120 ± 15 meV and 127 ± 13 meV for 0.77 ± 0.02%, 1.22 ± 0.02% and 1.40 ± 0.03% of strain, respectively. The obtained deformation potential in the direct band gap (a = –0.55 eV and b = –2.45 eV) are in good agreement with previously reported results for bulk material. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

📜 SIMILAR VOLUMES

Relaxation of strain in patterned strain
Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy
✍ C. Himcinschi; I. Radu; R. Singh; W. Erfurth; A.P. Milenin; M. Reiche; S.H. Chri 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 609 KB

Tensile strained Si (sSi) layers were epitaxially deposited onto fully relaxed Si 0.78 Ge 0.22 (SiGe) epitaxial layers (4 m) on silicon substrates. Periodic arrays of 150 nm × 150 nm and 150 nm × 750 nm pillars with a height of 100 nm were fabricated into the sSi and SiGe layers by electronbeam lith