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Use of the ion microanalyzer for the characterization of bulk and epitaxial silicon and gallium arsenide

โœ Scribed by A. M. Huber; M. Moulin


Book ID
112766514
Publisher
Springer
Year
1972
Tongue
English
Weight
599 KB
Volume
12
Category
Article
ISSN
1588-2780

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The thermal decomposition of triethylarsine (TEAS) has been studied. It decomposes at a lower temperature than arsine (AsH3). The decomposition proceeds via a radical process at a temperature above 700ยฐC. Epitaxial growth using TEAs has been investigated. A gallium arsenide (GaAs) layer with good mo