ITO coating of n-semiconductors should protect them against photocorrosion in aqueous electrolytes. For this purpose n-GaAs/ITO electrodes were produced by the magnetron sputtering technique. The dependence of the photovoltaic properties on the post deposition annealing temperatures is shown. The be
Use of porous GaAs electrodes in photoelectrochemical cells
โ Scribed by Cojocaru, A. ;Simashkevich, A. ;Sherban, D. ;Tiginyanu, I. ;Ursaki, V. ;Tsiulyanu, I. ;Usatyi, I.
- Book ID
- 105363179
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 163 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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โฆ Synopsis
Abstract
The photoelectrochemical properties of semiconductorโelectrolyte solar cells with carbon auxiliary electrode and colloidal aqueous solution of Na~2~SiO~3~ have been investigated. Bulk nโtype single crystalline and nanoporous GaAs material were used as semiconductor electrodes. Currentโvoltage characteristics under different illumination intensities and spectral distribution of the photosensitivity were studied. The photopotential was found to reach values as high as 0.46 V for bulk nโGaAs. The introduction of porosity in GaAs shifts the maximum of the spectral distribution of photosensitivity towards the longwavelength region and increases the short circuit current by a factor of two. (ยฉ 2005 WILEYโVCH Verlag GmbH & Co. KGaA, Weinheim)
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