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ITO coated n-GaAs electrodes for photoelectrochemical solar cells

✍ Scribed by A. Kraft; B. Görig; K.-H. Heckner


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
448 KB
Volume
32
Category
Article
ISSN
0927-0248

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✦ Synopsis


ITO coating of n-semiconductors should protect them against photocorrosion in aqueous electrolytes. For this purpose n-GaAs/ITO electrodes were produced by the magnetron sputtering technique. The dependence of the photovoltaic properties on the post deposition annealing temperatures is shown. The best photovoltaic parameters are produced by 3200C annealing. Unfortunately, the ITO/n-GaAs electrodes also undergo corrosion in aqueous electrolytes. A model for this unexpected photoelectroehemical behaviour is developed.


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