Novel method for the preparation of nCdSe electrodes for photoelectrochemical cells

✍ Scribed by R.C. Bhardwaj; C.M. Jadhav; M.M. Taqui Khan

• Publisher: Elsevier Science
• Year: 1985
• Weight: 338 KB
• Volume: 13
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(85)90022-5

✦ Synopsis

A new method for the preparation of n-CdSe thin film electrodes which give a cell efficiency of 5.7% is presented. The band gap of the material deposited by this method was calculated and was found to be lower than the band gap reported earlier by various workers. The photoresponse is relatively constant over a wide range of wavelengths and it does not decrease at shorter wavelengths. The increase in the stability when the CdSe electrode is coated with a thin film of indium is also reported. The formation of CdSe on cadmium-plated nickel dipped in SeO2 is a time-dependent process. The best fill factor and efficiency for a film of CdSe 2.4 pm thick are reported. The cadmium plating on nickel, the growth of CdSe films by dipping cadmiumplated nickel in SeO2, the stability of the photoresponse and its dependence on the thickness of the CdSe film are described in detail. Finally the values of efficiency found in the present work are compared with reported values.