✦ LIBER ✦

Photoelectrochemical etching of n-InP producing antireflecting structures for solar cells

✍ Scribed by D. Soltz; L. Cescato; F. Decker

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 881 KB
Volume: 25
Category: Article
ISSN: 0927-0248
DOI: 10.1016/0927-0248(92)90026-l

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Porous silicon formation by HF chemical

Porous silicon formation by HF chemical etching for antireflection of solar cells

✍ Shinji Yae; Hiroyuki Tanaka; Tsutomu Kobayashi; Naoki Fukumuro; Hitoshi Matsuda 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 585 KB

On the growth rate of photoelectrochemic

On the growth rate of photoelectrochemically grown silicon oxide antireflection coating for silicon solar cells

✍ N.K. Arora; S.N. Singh; N.P. Singh; B.K. Das 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 231 KB

Stabilization of the polycarbazole prote

Stabilization of the polycarbazole protected n-InSe photoanode for photoelectrochemical solar cells

✍ C.Levy Clement; S. Arvamuthan; K.S.V. Santhanam 📂 Article 📅 1988 🏛 Elsevier Science ⚖ 305 KB

Hydrogen passivation of n+p and p+n hete

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

✍ B. Chatterjee; S. A. Ringel; R. Hoffman Jr. 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 600 KB

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydr

Diffusion length determination in n+-p+-

Diffusion length determination in n+-p+-p+ structure based silicon solar cells from the intensity dependence of the short-circuit current for illumination from the p+ side

✍ G.C. Jain; S.N. Singh; R.K. Kotnala 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 494 KB