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Use of carbon-free Ta2O5 thin-films as a gate insulator

✍ Scribed by R.A.B. Devine; C. Chaneliere; J.L. Autran; B. Balland; P. Paillet; J.L. Leray

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
276 KB
Volume
36
Category
Article
ISSN
0167-9317

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✦ Synopsis

A novel electron cyclotron resonance plasma-enhanced chemical vapor deposition process using an alternative carbon-free source, namely TaFs, is proposed to obtain high quality amorphous Ta205 films. The excellent physical and electrical properties suggest that this material is clearly compatible with the requirements of high density CMOS operation, as demonstrated by the fabrication of p-channel MOS transistors with a Ta205 gate insulator.

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Organic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta 2 O 5 ) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employ