A novel electron cyclotron resonance plasma-enhanced chemical vapor deposition process using an alternative carbon-free source, namely TaFs, is proposed to obtain high quality amorphous Ta205 films. The excellent physical and electrical properties suggest that this material is clearly compatible wit
Use of amorphous carbon as a gate insulator for GaAs and related compounds
โ Scribed by S. Paul; F.J. Clough
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 120 KB
- Volume
- 70
- Category
- Article
- ISSN
- 0167-9317
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