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Use of a TiN barrier to improve GaAs FET ohmic contact reliability

โœ Scribed by Remba, R.D.; Suni, I.; Nicolet, M.-A.

Book ID
125533993
Publisher
IEEE
Year
1985
Tongue
English
Weight
643 KB
Volume
6
Category
Article
ISSN
0741-3106

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A transmission electron microscopy study
A transmission electron microscopy study of optically annealed ohmic contacts to GaAs using a Zirconium Diboride diffusion barrier
โœ M.P. Grimshaw; A.E. Staton-Bevan ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 699 KB

7he morphology of a nickel (5 nm), gold (45 nm), germanium (20 nm) ohmic contact to GaAs with a ZrB 2 (50nm) diffusion barrier, annealed to temperatures between 355 and 485 ยฐC, was studied by transmission electron microscopy. The barrier was found to remain intact and unreacted after annealing. The