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Stable ohmic contact to GaAs with TiN diffusion barrier

✍ Scribed by M.F. Zhu; A.H. Hamdi; M.-A. Nicolet; J.L. Tandon


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
313 KB
Volume
119
Category
Article
ISSN
0040-6090

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A transmission electron microscopy study
✍ M.P. Grimshaw; A.E. Staton-Bevan πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 699 KB

7he morphology of a nickel (5 nm), gold (45 nm), germanium (20 nm) ohmic contact to GaAs with a ZrB 2 (50nm) diffusion barrier, annealed to temperatures between 355 and 485 Β°C, was studied by transmission electron microscopy. The barrier was found to remain intact and unreacted after annealing. The