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Evaluation of NiInNi multi-layers for thermally stable ohmic contacts to n-GaAs

✍ Scribed by S.T. Hsia; C.P. Lee; H.L. Hwang


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
274 KB
Volume
33
Category
Article
ISSN
0921-5107

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A common metallization scheme for ohmic
✍ Krishnamachar Prasad 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 250 KB

Results are presented on the use of A1-Ni-Sn metallization system as a common metallization scheme to realize ohmic contacts to both p-type and n-type GaAs. The ohmic contacts yield a specific contact resistance in the range from 10 --~ to 10 -4 if2 cm 2 for both p-type and n-type GaAs. The presence