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Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate

✍ Scribed by Gong-Ru Lin; Hao-Chung Kuo; Chi-Kuan Lin; Feng, M.

No coin nor oath required. For personal study only.

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10-gb/s operation of an In/sub 0.53/Ga/s

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