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Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD

✍ Scribed by Qi Wang; Jihe Lu; Deping Xiong; Jing Zhou; Hui Huang; Ang Miao; Shiwei Cai; Yongqing Huang; Xiaomin Ren

No coin nor oath required. For personal study only.

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