✦ LIBER ✦

Ultra-narrow photoluminescence line widths in InAs quantum dots multilayers

✍ Scribed by J.C. González; F.M. Matinaga; W.N. Rodrigues; M.V.B. Moreira; A.G. de Oliveira

Book ID: 117215648
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 143 KB
Volume: 482-485
Category: Article
ISSN: 0039-6028
DOI: 10.1016/s0039-6028(01)00874-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Carrier transfer and photoluminescence q

Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots

✍ Sanguinetti, S.; Padovani, M.; Gurioli, M.; Grilli, E.; Guzzi, M.; Vinattieri, A 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 289 KB

Photoluminescence from multilayer InAs/G

Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3–1.4 μm wavelength range

✍ V. A. Egorov; V. N. Petrov; N. K. Polyakov; G. É. Tsyrlin; B. V. Volovik; A. E. 📂 Article 📅 2000 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 51 KB

An approach to suppress the blue-shift o

An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing

✍ S. Adhikary; K. Ghosh; S. Chowdhury; N. Halder; S. Chakrabarti 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 298 KB

A narrow photoluminescence linewidth of

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In[sub 0.2]Ga[sub 0.8]As grown on GaAs substrates

✍ Nishi, Kenichi; Saito, Hideaki; Sugou, Shigeo; Lee, Jeong-Sik 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 541 KB