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Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots

✍ Scribed by Sanguinetti, S.; Padovani, M.; Gurioli, M.; Grilli, E.; Guzzi, M.; Vinattieri, A.; Colocci, M.; Frigeri, P.; Franchi, S.

Book ID
125469147
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
289 KB
Volume
77
Category
Article
ISSN
0003-6951

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In an adiabatic approach, the efficiency of the electron-phonon interaction (EPI) can be determined by measuring the ratio between the intensities of two of the phonon replicas that EPI induces in photoluminescence (PL) spectra. In low-dimensional structures such as InAs/GaAs quantum dots (QDs), thi