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A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In[sub 0.2]Ga[sub 0.8]As grown on GaAs substrates

✍ Scribed by Nishi, Kenichi; Saito, Hideaki; Sugou, Shigeo; Lee, Jeong-Sik

Book ID: 121786741
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 541 KB
Volume: 74
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.123459

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