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UHV-CVD Ge/Si(100) heteroepitaxy monitored by in situ ellipsometry

✍ Scribed by R. Larciprete; S. Cozzi; E. Masetti; M. Montecchi

Book ID
103619152
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
369 KB
Volume
102
Category
Article
ISSN
0169-4332

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πŸ“œ SIMILAR VOLUMES

Unimodal dome-shaped island population o
Unimodal dome-shaped island population of Ge/Si (0 0 1) by step-wise growth in UHV-CVD
✍ V Zela; I Pietzonka; T Sass; C Thelander; S Jeppesen; W Seifert πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 196 KB

This work introduces a new approach to achieve a unimodal dome-shaped island population for the self-assembled Ge=Si (0 0 1) dots grown by ultra-high vacuum chemical vapour deposition at T = 620 β€’ C. A step-wise growth mode is applied, consisting of two Ge deposition steps with a short growth inter