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Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD

✍ Scribed by Halbwax, M. ;Yam, V. ;Clerc, C. ;Zheng, Y. ;Debarre, D. ;Nguyen, Lam. H. ;Bouchier, D.

Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 161 KB
Volume: 201
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200303968

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