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Type-I/type-II exciton in strained Si/SiGe multi-QWs

✍ Scribed by K.Y. Wang; W.P. Huang; T.C. Lin; C.P. Lee; Y.T. Sung; R.J. Nicholas; H.H. Cheng

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
426 KB
Volume
40
Category
Article
ISSN
1386-9477

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Exciton oscillator strength in GaAs/AlAs
Exciton oscillator strength in GaAs/AlAs superlattices near type I-type II transition
✍ I.L. Aleiner; E.L. Ivchenko; V.P. Kochereshko; G.L. Sandler; P. Lavallard; R. Pl πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 139 KB

We present resonance reflectivity measurements performed on graded GaAs/AlAs superlattices in the transitional region from type I to type II. A theory of exciton states and exciton oscillator strength is developed making allowance for the mixing of \(\Gamma_{1}, X_{1}\) and \(X_{3}\) electron states