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Two-step photoconductivity by dislocations in silicon

โœ Scribed by Kos, H.-J. ;Neubert, D.

Publisher
John Wiley and Sons
Year
1977
Tongue
English
Weight
404 KB
Volume
44
Category
Article
ISSN
0031-8965

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๐Ÿ“œ SIMILAR VOLUMES

Passivation of dislocations in silicon b
Passivation of dislocations in silicon by hydrogenation
โœ I. Perichaud; H.El Ghitani; S. Martinuzzi ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 258 KB

We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximat