Dislocation locking by nitrogen impurities in FZ-silicon
✍ Scribed by A. Giannattasio; S. Senkader; R.J. Falster; P.R. Wilshaw
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 190 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
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## Abstract Dislocation locking experiments have been used to investigate nitrogen‐doped float‐zone silicon (NFZ‐Si). Experiments on NFZ‐Si with a nitrogen concentration of 2.2 × 10^15^ cm^–3^ were carried out at different annealing temperatures (550–830 °C) for different annealing times (0–1500 ho
## Abstract A measurement of nitrogen out‐diffusion from nitrogen‐doped float‐zone silicon made using a dislocation locking technique is presented. Specimens containing a well‐defined array of dislocation half‐loops are subjected to identical anneals at 750 °C, during which nitrogen diffuses both t