Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress

✍ Scribed by Chen, Fa-Hsyang; Pan, Tung-Ming; Chen, Ching-Hung; Liu, Jiang-Hung; Lin, Wu-Hsiung; Chen, Po-Hsueh

• Book ID: 121680094
• Publisher: IEEE
• Year: 2013
• Tongue: English
• Weight: 697 KB
• Volume: 34
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2013.2248115