✦ LIBER ✦
A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors
✍ Scribed by Jang, Hyun Jun; Lee, Seung Min; Yu, Chong Gun; Park, Jong Tae
- Book ID
- 122480034
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 987 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0026-2714
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