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Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's

✍ Scribed by Tang, J.Y.-F.


Book ID
114595271
Publisher
IEEE
Year
1985
Tongue
English
Weight
808 KB
Volume
32
Category
Article
ISSN
0018-9383

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Quasi-two-dimensional simulation of dual
✍ F. Duhamel; J. C. De Jaeger; Y. Butel; M. Lefebvre; G. Salmer πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 322 KB

A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The