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Pseudo two-dimensional simulation of a three heterojunction GaAs/AlGaAs MODFET

✍ Scribed by D. Théron; H.J. Bülmann; M. Ilegems


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
770 KB
Volume
33
Category
Article
ISSN
0038-1101

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Transport properties of a two-dimensional electron gas (2DEG) have been investigated in a novel selectively doped n-AlGaAs/GaAs heterojunction where InAlAs anti-dots are embedded in the vicinity of its channel. Electron mobilities and Shubnikov de Haas oscillations were measured and analyzed to dete