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Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors

✍ Scribed by B. Schlothmann; R. M. Bertenburg; M. Agethen; P. Velling; W. Brockerhoff; F.-J. Tegude


Book ID
104556373
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
179 KB
Volume
0
Category
Article
ISSN
1862-6351

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The collector current distribution of bipolar power transistors at high current densities has been calculated by quasi-two-dimensional device simulations and compared with infrared recombination radiation measurements. Further, modeling results concerning the influence of transistor doping profile a