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Two-dimensional numerical simulation of side-gating effect in GaAs MESFETs

โœ Scribed by Goto, N.; Ohno, Y.; Yano, H.


Book ID
114536815
Publisher
IEEE
Year
1990
Tongue
English
Weight
717 KB
Volume
37
Category
Article
ISSN
0018-9383

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Two-dimensional numerical simulation of
โœ Samir El-Ghazaly; Tatsuo Itoh ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 768 KB

The Boltzmann transport equation is used to derive a set of conservation equations which is capable of describing the electron transport phenomena in a single-valley semiconductor. These conservation equations are averaged over the different valleys of the conduction band to develop another set of e