✦ LIBER ✦

MP-A8 Two-dimensional numerical simulation of GaAs MESFET's with recessed-gate structure

✍ Scribed by Frensley, W.R.

Book ID: 114593189
Publisher: IEEE
Year: 1979
Tongue: English
Weight: 152 KB
Volume: 26
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1979.19702

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Two-dimensional numerical simulation of

Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's

✍ Cook, R.K.; Frey, J. 📂 Article 📅 1982 🏛 IEEE 🌐 English ⚖ 795 KB

Two-dimensional numerical simulation of

Two-dimensional numerical simulation of short-gate-length gaAs MESFETs and application to the travelling gunn domain phenomenon

✍ Samir El-Ghazaly; Tatsuo Itoh 📂 Article 📅 1988 🏛 John Wiley and Sons 🌐 English ⚖ 768 KB

The Boltzmann transport equation is used to derive a set of conservation equations which is capable of describing the electron transport phenomena in a single-valley semiconductor. These conservation equations are averaged over the different valleys of the conduction band to develop another set of e

Development and experimental verificatio

Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs : J -C RAMIREZ, P J McNALLY, L S COOPER, J J ROSENBERG, L B FREUND (Div. of Eng., Brown Univ., Providence, RI, USA), T N JACKSON IEEE Trans. Electron. Devices (USA), vol. 35, no. 8, pp. 1232–1240 (Aug. 1988)

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 104 KB