✦ LIBER ✦

Two-dimensional simulation of orientation effects in self-aligned GaAs MESFETs

✍ Scribed by Shih-Hsien Lo; Chien-Ping Lee

Book ID: 114536894
Publisher: IEEE
Year: 1990
Tongue: English
Weight: 958 KB
Volume: 37
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.59901

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optimization of n+ self-aligned short-ch

Optimization of n+ self-aligned short-channel normally-off GaAs MESFETs by two-dimensional numerical device simulation

✍ M. Passlack; R. Stenzel; H. Elschner 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 617 KB

Two-dimensional numerical simulation of

Two-dimensional numerical simulation of side-gating effect in GaAs MESFETs

✍ Goto, N.; Ohno, Y.; Yano, H. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 717 KB

Two-dimensional simulation of the drain-

Two-dimensional simulation of the drain-current transient effect in GaAs MESFETs

✍ S.H. Lo; C.P. Lee 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 304 KB

Structure dependence of the short-channe

Structure dependence of the short-channel effect in GaAs MESFETs. Two-dimensional device simulation

✍ Mayumi Hirose; Yasuo Ikawa; Nobuyuki Toyoda 📂 Article 📅 1988 🏛 John Wiley and Sons 🌐 English ⚖ 793 KB

Two-dimensional numerical simulation of

Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's

✍ Cook, R.K.; Frey, J. 📂 Article 📅 1982 🏛 IEEE 🌐 English ⚖ 795 KB

Quasi-two-dimensional simulation of an i

Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector

✍ M. Madheswaran; V. Rajamani; P. Chakrabarti 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 216 KB 👁 2 views

A quasi-two-dimensional numerical model of an optically ( ) gated GaAs metal semiconductor field-effect transistor MESFET has been de¨eloped for the characterization of the de¨ice as a photodetector. The model considers the channel to be nonuniformly doped. The model in¨ol¨es the solution of a 1-D P