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Two-dimensional numerical analysis for high electron mobility transistors (HEMTs)

✍ Scribed by Jiro Yoshida; Mamoru Kurata

Book ID
112076047
Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
631 KB
Volume
68
Category
Article
ISSN
8756-663X

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πŸ“œ SIMILAR VOLUMES

Enhancement of two-dimensional electron
Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers
✍ Hashimoto, Shin ;Akita, Katsushi ;Yamamoto, Yoshiyuki ;Ueno, Masaki ;Nakamura, T πŸ“‚ Article πŸ“… 2012 πŸ› John Wiley and Sons 🌐 English βš– 328 KB

## Abstract We have demonstrated a high sheet carrier concentration in AlGaN‐channel high‐electron‐mobility transistors (HEMTs) with AlN barrier layer. We investigate the epitaxial structure of these HEMTs by X‐ray diffraction and reveal that the partial lattice relaxation occurs in the Al~0.51~GaN