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Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide

✍ Scribed by Vasiliauskas, Remigijus; Syväjärvi, Mikael; Beshkova, Milena; Yakimova, Rositza


Book ID
120793403
Publisher
Trans Tech Publications, Ltd.
Year
2009
Tongue
English
Weight
561 KB
Volume
615-617
Category
Article
ISSN
1662-9752

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## Homoepitaxial growth of 6H-SiC layers is performed at 1600°C using propane and silane as source gases. The influence of the growth parameters, temperature and gas concentrations on the growth rate is discussed. The films are examined by structural, optical and electrical characterization techni