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Two-dimensional noise calculations of sub-micrometer MESFETs

โœ Scribed by A. Abou-Elnour; K. Schuenemann


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
214 KB
Volume
19
Category
Article
ISSN
0167-9317

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Microwave operation of sub-micrometer ga
โœ P. Calvani; A. Corsaro; F. Sinisi; M. C. Rossi; G. Conte; E. Giovine; W. Ciccogn ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 422 KB

## Abstract Submicron gateโ€length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogenโ€terminatedโ€”large grain polycrystalline diamond. Devices showed high drainโ€source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cutโ€off frequency f~t~ = 10