Microwave operation of sub-micrometer gate surface channel MESFETs in polycrystalline diamond
✍ Scribed by P. Calvani; A. Corsaro; F. Sinisi; M. C. Rossi; G. Conte; E. Giovine; W. Ciccognani; E. Limiti
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 422 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
Submicron gate‐length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogen‐terminated—large grain polycrystalline diamond. Devices showed high drain‐source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut‐off frequency f~t~ = 10 GHz and a maximum oscillation frequency, f~max~, up to 35 GHz. These values are obtained through the fabrication of devices with geometry and active region dimensions (200–500 nm gate length) compatible with available microelectronic technologies. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2786–2788, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24738