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Two-dimensional modeling of ion implantation with spatial moments

✍ Scribed by G. Hobler; E. Langer; S. Selberherr

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
932 KB
Volume
30
Category
Article
ISSN
0038-1101

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A quasi-two-dimensional numerical model of an optically ( ) gated GaAs metal semiconductor field-effect transistor MESFET has been de¨eloped for the characterization of the de¨ice as a photodetector. The model considers the channel to be nonuniformly doped. The model in¨ol¨es the solution of a 1-D P