Heterostructures of Si 0.80 Ge 0.20 /Si (100) were grown by pulsed laser deposition consisting of alternating 10 nm SiGe and silicon layers for a total of 10 periods. The presence of alloy clustering at SiGe/Si interfaces was investigated by parallel transport in transistor structures. Photoluminesc
β¦ LIBER β¦
Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications
β Scribed by T.E. Whall
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 571 KB
- Volume
- 157
- Category
- Article
- ISSN
- 0022-0248
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