Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

✍ Scribed by J.F. Nützel; C.M. Engelhardt; R. Wiesner; D. Többen; M. Holzmann; G. Abstreiter

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 337 KB
• Volume: 150
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(95)80092-q