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Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures

✍ Scribed by Pandey, S.; Fraboni, B.; Cavalcoli, D.; Minj, A.; Cavallini, A.

Book ID
120347894
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
686 KB
Volume
99
Category
Article
ISSN
0003-6951

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## Abstract The electron transport properties in Al~0.25~Ga~0.75~N/AlN/GaN/In~__x__~Ga~1βˆ’__x__~N/GaN double heterostructures with various indium compositions and GaN channel thicknesses were investigated. Samples were grown on __c__‐plane sapphire substrates by MOCVD and evaluated using variable te