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Two-dimensional charge-control model for MODFET's

✍ Scribed by Young Min Kim; Roblin, P.


Book ID
114595718
Publisher
IEEE
Year
1986
Tongue
English
Weight
701 KB
Volume
33
Category
Article
ISSN
0018-9383

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Self-consistent quantum models of GaN-based nanostructures are presented. We report on the calculation of electrical characteristics of AlGaN/GaN heterojunction field effect transistors through an optimized effective mass approach based on the self-consistent solution of the Schro Β¨dinger and Poisso