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Quasi Two-Dimensional Modeling of GaN-Based MODFETs

✍ Scribed by Sacconi, F. ;Di Carlo, A. ;Lugli, P. ;Morko�, H.

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
82 KB
Volume
188
Category
Article
ISSN
0031-8965

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✦ Synopsis

Self-consistent quantum models of GaN-based nanostructures are presented. We report on the calculation of electrical characteristics of AlGaN/GaN heterojunction field effect transistors through an optimized effective mass approach based on the self-consistent solution of the Schro ¨dinger and Poisson equations coupled to a quasi-2D model for the current flow.

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