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Tunneling time of electrons through a potential barrier

โœ Scribed by L. M. Baskin; D. G. Sokolovskii

Book ID
112429092
Publisher
Springer
Year
1987
Tongue
English
Weight
209 KB
Volume
30
Category
Article
ISSN
1573-9228

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Tunneling time and post-tunneling position of an electron incident on a heterostructure grown on anisotropic materials are derived by solving an effective mass equation including off-diagonal effective mass tensor elements. The effects of different effective masses for a heterostructure junction are

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The phase time of an electron tunneling through a heterostructure potential barrier is derived, including the position-dependent effective-mass effect. The usual phase time of the tunneling derived assuming a homogeneous effective mass deviates from this result by \(-15 \% \sim-28 \%\).