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Electron tunneling through a potential barrier under non-normal incidence

โœ Scribed by B. Lee; W. Lee

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
647 KB
Volume
18
Category
Article
ISSN
0749-6036

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๐Ÿ“œ SIMILAR VOLUMES

Electron tunneling time through a hetero
Electron tunneling time through a heterostructure potential barrier
โœ Byoungho Lee ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 125 KB

The phase time of an electron tunneling through a heterostructure potential barrier is derived, including the position-dependent effective-mass effect. The usual phase time of the tunneling derived assuming a homogeneous effective mass deviates from this result by \(-15 \% \sim-28 \%\).

Tunneling time and the post-tunneling po
Tunneling time and the post-tunneling position of an electron through a potential barrier in an anisotropic semiconductor
โœ Kyoung-Youm Kim; Byoungho Lee ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 148 KB

Tunneling time and post-tunneling position of an electron incident on a heterostructure grown on anisotropic materials are derived by solving an effective mass equation including off-diagonal effective mass tensor elements. The effects of different effective masses for a heterostructure junction are