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Tunneling time and the post-tunneling position of an electron through a potential barrier in an anisotropic semiconductor

โœ Scribed by Kyoung-Youm Kim; Byoungho Lee

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
148 KB
Volume
24
Category
Article
ISSN
0749-6036

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โœฆ Synopsis

Tunneling time and post-tunneling position of an electron incident on a heterostructure grown on anisotropic materials are derived by solving an effective mass equation including off-diagonal effective mass tensor elements. The effects of different effective masses for a heterostructure junction are also included.

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