Tunneling of Electrons through a Potential Barrier with Impurity Levels in Semiconductors in the Presence of an Electric Field

Effects of an Electric Field on the Bind

Effects of an Electric Field on the Binding Energy of a Donor Impurity in a Spherical GaAs–(Ga,Al)As Quantum Dot with Parabolic Confinement

✍ G. Murillo; N. Porras-Montenegro 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 79 KB 👁 2 views

The binding energy of a donor impurity in a spherical GaAs±(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective-mass approximation