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Tunneling recharging of oxide centres in silicon mos structures

✍ Scribed by Gorban, A. P. ;Litovchenko, V. G. ;Moskal, D. N.

Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
248 KB
Volume
32
Category
Article
ISSN
0031-8965

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A recombination radiation line (S-line) of surface 2D holes and 2D nonequilibrium electrons is observed in electroluminescence spectra of tunneling [100] silicon MOS (metalΒ±oxideΒ±semiconductor) diodes under tunneling injection of electrons into a selforganized electron quantum well. The electron qua