Kinetics of Two-Dimensional Electrons and Holes in Tunneling Silicon MOS Structures

✍ Scribed by P.D. Altukhov; E.G. Kuzminov

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 104 KB
• Volume: 221
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200009)221:1<439::aid-pssb439>3.0.co;2-a

✦ Synopsis

A recombination radiation line (S-line) of surface 2D holes and 2D nonequilibrium electrons is observed in electroluminescence spectra of tunneling [100] silicon MOS (metal±oxide±semiconductor) diodes under tunneling injection of electrons into a selforganized electron quantum well. The electron quantum well in presence of an electrical field in the substrate forms an additional potential barrier. The transparency of a double barrier, including the oxide barrier and the additional barrier, can be modulated by the electrical field in the substrate. A possible realization of a tunneling ballistic transistor (tullistor) by use of this modulation is discussed. The tullistor can serve as a fast and effective light emitter or a laser and as a fast photodetector. A simple theory of the tullistor is given. Kinetics of 2D electrons and holes and corresponding kinetics of electroluminescence are analyzed.