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Tunnel charge transport within silicon in reversely-biased MOS tunnel structures

✍ Scribed by M.I. Vexler; A. El Hdiy; D. Grgec; S.E. Tyaginov; R. Khlil; B. Meinerzhagen; A.F. Shulekin; I.V. Grekhov

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 300 KB
Volume: 37
Category: Article
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2005.04.048

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