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Tunneling of silicon electrons through an oxide layer in a strong field

✍ Scribed by V. A. Fedirko; V. D. Shadrin


Book ID
110117876
Publisher
SP MAIK Nauka/Interperiodica
Year
1997
Tongue
English
Weight
124 KB
Volume
39
Category
Article
ISSN
1063-7834

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Tunneling time and the post-tunneling po
✍ Kyoung-Youm Kim; Byoungho Lee πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 148 KB

Tunneling time and post-tunneling position of an electron incident on a heterostructure grown on anisotropic materials are derived by solving an effective mass equation including off-diagonal effective mass tensor elements. The effects of different effective masses for a heterostructure junction are